Transient Response of Cu/PTA 1/p-Si(100) Multilayer Configuration

Author: Kyi Kyi Aung1, Khin Nyo Win1, Lai Lai Aung2, Than Than Win3 and Ko Ko Kyaw Soe4

Abstract:

      The temperature dependence of the transient current is important for the understanding of the trapping mechanisms in the dielectrics during processing. Before the I-V and C-V measurements, transient response was essentially analysed to avoid unnecessary current occurrence.

Keywords: transient response, I-V characteristic, C-V characteristic.

Published:  Published:  Myanmar Academy of Arts and Science Research Journal (Vol , No-2(A), March  2008, Physics)