Abstract:
Zinc oxide thin film was prepared on SiO2/Si substrate by spin coating technique. The microstructural properties were studied by Scanning Electron Microscopy (SEM). An Indium Tin Oxide (ITO) conductive layer was deposite on ZnO film in order to minimize the cell degadation. I-V characteristics of ITO coated cells were observed in dark condition. I-V characteristics of illuminated cell were measured by means of monochromatic Na-Lamp. Some performance parametres for the cell couls be determined and comparde to those of illumiated cell without buffer layer.
Key words: ITO conductive layer, cell degradation, buffer layerPublished: Universities Research Journal
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