Study on Ferroelectric Properties of TiO2/P-SiO2 (Metal/ Ferroelectric/ Insulator/Semiconductor) Thin Films

Author: May Yee Thein1, Yin Yin Thein2, Than Than Win3 and Ko Ko Kyaw Soe4

Abstract:

       Fabrication of TiO2/SiO2/[0Si (Metal/ Ferroelectric/ Insulator/ Semiconductor) thin films, deposited by liquid phase epitaxial growth method if presented. Samples are heated at 500?, 550?, 600?,650?, 700? each for 1hr respectively. The ferroelectric properties such as the remanent polarization Pr, the spontaneous polarization Ps, the coercive field Ec and the memory window (MW) of thin films are studied.

Keywords:  remanent polarization, spontaneous polarization, coercive field, memory window.

Published:  Universities Research Journal