Output Characteristics of PbTi(A1) O3(x=0.06 mol) Gated TFT

Author: May Aye Khaing1, Than Than Win2,Yin Maung Maung3, Ko Ko Kyaw Soe3

Abstract:

      PbTiAlO3 gated thin film transistor is firstly prepared for 1T of FRAM application. For output characteristics of fabricated TFT, IDS-VGS relationship is studied at different gate to source to source voltages.
Key words: thin film transistor (TFT), IDS-VGS relationship.

Published:  Published:  Myanmar Academy of Arts and Science Research Journal (Vol , No-2(A), March  2008, Physics)