Abstract:
Al (9 mol%) doped PbTiO3, thin layers are prepared by own sol based method. Thin layers are deposited on p-Si (100) substrates by spin coating technique. Samples are heat treated at 500°C, 550°C, 600°C and 700°C for 2 hr each, respectively, XRD analyses are carried out to examine the phase assignment, crystallographic investigation and lattice parameters of thin layers. Ferroelectric behaviour of the hetero structures are treated by using modified Sawyer-Tower circuit.
Keywords: XRD, ferroelectric
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