Ferroelectric behaviours of MgtiO3 thin film for Memory Diode Application

Author: Thida Win1, Win Pa Pa Tun2 ,  Ko Ko Kyaw Soe2 Yin Maung Maung2 and Than Than Win3

Abstract:

       MgTiO3 thin films are prepared by solid sol-based method. Thin films are deposited onto p-type silicon by spin coating technique with constant speed and heat treated at 600°C for 1 hr to form MOS capacitor. The device is characteristics of thin film capacitors are carried out. The results are analyzed and found that the characteristics of P-E from the hysteresis loop, the remanent polarization (Pr), the remanent polarization (Ps), the coercive field (Ec) and the memory window (MW) are measured.

Keywords:  hysteresis loop, P-E variation.

Published:  Published:  Myanmar Academy of Arts and Science Research Journal (Vol , No-2(A), March  2007, Physics)