Author: Cho Cho Myat Aung1, Than Than Win2, Yin Maung Maung1& Ko Ko Kyaw Soe3
Abstract:
I-V characteristics of Zn0.98 Mg0.02O/P-Si(100) cells were measured in daek condition (background rad=0). The behaviour of the 1nI with respect to the biased voltage was investigated at different process temperature to obtain identity factor and zero-bias barrier height in order to utilize the laboratory prepared semiconductor devices especially for photovoltaic cell.
Key words: Current-voltage characteristics, identity factor,zero-bias barrier height
Published: Published: Myanmar Academy of Arts and Science Research Journal (Vol , No-2(A), March 2008, Physics)
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