Author: Khine Khine Linn1, Than Than Win2, Yin Maung Maung3 and Ko Ko Kyaw Soe4
Abstract:
Li-doped ZnO film is prepared on highly polished Si substrate. The process temperature are range from 400oC to 600C and maintained 1 hr for homogenization. According to the experimental results, it is significant that the growth chemistry is quite feasible and expected to be crystalline at above-mentioned temperatures.
Key words: Li-doped ZnO films, process temperature, homogenization
Published: Published: Myanmar Academy of Arts and Science Research Journal (Vol , No-2(A), March 2008, Physics)
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