Processing and Characterization of AI (4 mol%) Doped PbTiO3 Ferroelectric Memory Diode

Author: Nwe Nwe Win1, Nwe Nwe Aye2, Yin Mg Mg2,Than Than Win3& Ko Ko Kyaw Soe4

Abstract:

       Ferroelectric memory diode of A1 (4 mol%) doped PbTiO3 thin films prepared by sol-based deposition method. For electrical characteristic, IV variation was  essentially studied. From this curve, LVR (Low Voltage Resistance), Imax and VTH were observed. From In From In I-V linear relationship η and ϕbo were measured.

Keywords  :  In I vs V, Imax VTH, η and ϕbo

Published:  Published:  Myanmar Academy of Arts and Science Research Journal (Vol , No-2(A), March  2008, Physics)