Process Temperature Dependence on I-V Characteristics of Zn0.98Mg0.02O Films in Dark Condition

Author: Cho Cho Myat Aung1, Than Than Win2, Yin Maung Maung1& Ko Ko Kyaw Soe3

Abstract:

I-V characteristics of Zn0.98 Mg0.02O/P-Si(100) cells were measured in daek condition (background  rad=0). The behaviour of the 1nI with respect to the biased voltage was investigated at different  process temperature to obtain identity factor and zero-bias barrier height in order to utilize the laboratory prepared semiconductor devices especially for photovoltaic cell.

Key words: Current-voltage characteristics,  identity factor,zero-bias barrier height

Published:  Published:  Myanmar Academy of Arts and Science Research Journal (Vol , No-2(A), March  2008, Physics)