Growth of Barium Titanate Thin Film for Non-volatile Memory Device Application

Author:  Myint Thainn1, Yin Maung Maung2 and Than Than Win3

Abstract:

        The barium titanate (BaTiO) thin film based on MOS diode was firstly prepared by spin-coating technique. Dispersion of capacitance as a function of applied voltage was observed at 100 kHz. the bias voltage was cycled between ±1, ±2, ±3 and ±4V. From C-C hysteresis loop, flat-band voltage, threshold voltage, maximum accumulation capacitance and the width of memory window were estimated.

Key words: thin film transistor, drain characteristics, FRAM

Published:  Universities Research Journal