1/C2-V Characteristics of TiO2/SiO2/p-Si(Metal/Ferroelectric/ Insulator/Semiconductor) Thin Films

Author: May Yee Thein1, Yin Yin Thein2, Than Than Win3, and Ko Ko Kyaw Soe4

Abstract:

       Fabrication of TiO2/SiO2/p-Si (Metal/ Ferroelectri/ Insulator/ Semiconductor) thin films, deposited by liquid phase epitaxial growth method was presented. I/C2-V characteristic at room temperature measured at frequency of 100 kHz for TiO2 thin films anneal at 500 ˚C , 550 ˚C, 600 ˚C, 650 ˚C and 700 ˚C were investigated. Measurement of C as a function of reverse bias was used to determine the built-in potential and dopant concentration. A plot of 1/C2 as a function V was a straight line which intercept on the voltage axis gives Vbi, and the slope was used to determine the effective dopant concentration Ni.

Key words: dopant concentration, depletion layer width, built-in potential

Published:  Published:  Myanmar Academy of Arts and Science Research Journal (Vol.VI,No-2(A), March  2008, Physics)