Abstract:
Indium doped Zinc oxide thin film was prepared on SiO2/Si substrate structure by spin-coating technique. The micro-structural properties were studied by scanning Electron Microscopy (SEM). An Indium Tin Oxide (ITO) conductive layer was deposited on In: ZnO film in order to minimize the cell degradation. Current and voltage characteristics of ITP coated In: ZnO solar cells were observed when the incident light was prevented from exciting the solar cell. Current-Voltage characteristic of illuminated cell was also measured by means of monochromatic Na lamp. Some performance parameters for the cell could be determined from Isc-Voc curve and compared to these of illuminated cell without buffer layer.
Key words: Spain-coating, SEM, In: ZnO cell, Osv-Voc.
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