I-V and C-V characteristics of MgTiO3 Thin films

Author: Win Pa Pa Htun,Thida Win2, Than Than Win3 , Yin Maung Maung1 and  Ko Ko Kyaw Soe1

Abstract:

           MgTiO3 thin films are prepared by sol-based method. Thin films are deposited onto p-type silicon by spin-coating technique with constant speed and heat treated at 600 for 1 hr to form MOS capacitor. From the I-V data, the saturation current (Io) are estimated from the plot: ideality factor and zero-bias barrier height are systematically investigated by the Schottky equation. From the C-V data, the flat-band voltage (up and down), the threshold voltage (up and down) and width are estimated the graphs. 

Keywords:  ideality factor, zero-bias barrier beight, flat-band voltage, threshold voltage

Published:  Published:  Myanmar Academy of Arts and Science Research Journal (Vol , No-2(A), March  2007, Physics)