Abstract:
The aim of this work was concerned with the fabrication of MnO2 doped ZnO film sprn- on p-Si (100) substrate. I.V characteristics of the cells was examined under illumination condition. The photovoltaic devices have been prepared under various annealing temperature such as 500˚C, 650˚C and 700˚C respectively. Maximum power (pm), conversion efficiency (ηcon), (Ff) and series resistance (Rs) of the fabricated cells are also determined.
Keywords: I-V characteristics, conversion efficiency, fill-factor
Published: Published: Myanmar Academy of Arts and Science Research Journal (Vol.VII,No-2(A), March 2009, Physics)
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