C-V and Pyroelectric Properties of Pb1-x Lax TiO3 Film for IR Sensor Application

Author: Nwe Nwe Oo1 , Myint Myint Win2, Than Than Win3, Yin Maung Maung4 

and Ko Ko Kyaw Soe5

Abstract:

       This paper gives a growth of Pb1-x Lax TiO3 (x = 1 mol%) film on naked Si and SiO2/Si substrate structures. After electroding the PLT/Si and PLT/SiO2/Si, the focus is put on the description of C-V characteristics measurement system. From C-V counter-clockwise loop, threshold voltage VTH (U & D), flat-band voltage VFB (U, D), maximum accumulation capacitance (Caccu), memory window (MW) and density of interfacial surface state (Nss) were observed. This paper closes with the pyroelectric properties (pyrocurrent and pyroelectric coefficient) measurement systems. 

Key words: pyroelectric properties, C-V characteristics, threshold voltage

Published:  Published:  Myanmar Academy of Arts and Science Research Journal (Vol.VI,No-2(B), March  2008, Physics)