Author: Htay Htay Win1, Myint Myint Win2, Thandar Tin2, Than Than Win3, Moh Moh Lwin2, Yin Maung Maung2 and Ko Ko Kyaw Soe4
Abstract:
The epitaxial growth technique developed in this work was based on the use of PbO, TiO2 and La2O3, powder of regent- grade in the preparation of precursor sol in the processing of La2 O3, powder of regent-grade in the preparation of precursor sol in the processing of La modified lead titanate thin film at different process temperature. As the experimental results, the output characteristic curve and product parameters were examined to be within the range of accepted values for 1T of FRAM (Single Transistor of Ferroelectric Random Acess Memory)
Key words : eptitaxial, PbO, TiO2, FRAM
Published: Published: Myanmar Academy of Arts and Science Research Journal (Vol.VI,No-2(B), March 2008, Physics)
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