Author: Nilar Win1, Aye Su Mon Win1, Than Than Win2, Than Htoon3 ,Yin Maung Maung4 and Ko Ko Kyaw Soe5
Abstract:
Fabrication of Sn-doped lead titanate film was presented by spin-coating technique. The substrate temperatures treated in this work were 500C700C maintained 1hr for more film quality. For the charge storage capacity of fabricated cell, C-V characteristics were studied by simple R-C circuit in which Cu/PST/p-Si (100) cell was served as a circuit element. From C-V curve, counter-clockwise hysteresis loop was formed for all fabricated cell. Threshold voltage (VTH), flat-band voltage (VFB), the width of the memory (MW), maximum accumulation capacitance (Caccu) and the density of interfacial surface state (Nss) were systematically measured from C-V loop.
Key words : C-V characteristics, VTH, VFB, Caccu Nss
Published: Published: Myanmar Academy of Arts and Science Research Journal (Vol.VI,No-2(B), March 2008, Physics)
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