Photovoltaic Properties of Zn1-xMnxO3(=0.60 mol) Powered Film

Author: Aye Mya Thida1, Than Than Win2, Kaung Kaung Yu, Lay Kalyar Kyaw,Yin Maung Maung3, Ko Ko Kyaw Soe3

Abstract:

             The aim of this work was concerned with the fabrication of MnO2 doped ZnO film sprn- on p-Si (100) substrate. I.V characteristics of the cells was examined under illumination condition. The photovoltaic devices have been prepared under various annealing temperature such as 500˚C, 650˚C and 700˚C respectively. Maximum power (pm), conversion efficiency (ηcon), (Ff) and series resistance (Rs) of the fabricated cells are also determined.

Keywords: I-V characteristics, conversion efficiency, fill-factor

Published:  Published:  Myanmar Academy of Arts and Science Research Journal (Vol.VII,No-2(A), March  2009, Physics)

Spin-Time Dependence of Film Thickness for Ca1-xCux(TiO3) (x=0.1 mol) Film

Author: Phyu Phyu Khaing1, Myo Khine1, Khin Myo Aye2,Yin Maung Maung3 and Than Than Win4

Abstract:

        The calcium copper titanate (CaCu3Ti4O12) thin films were deposited on 1cm2(1 0 0) orientated silicon substrates by  spin coating method. Ethylene glycol (CH2OHCH2OH) was used as solvent in sol-gel processing. The spin coating process was taken at different spin time arrangements under constant temperature and the film thicknesses were determined.

Keywords: CaCu3Ti4O12, sol-gel ,spin coating, silicon substrate, film thicknesses 

Published:  Published:  Myanmar Academy of Arts and Science Research Journal (Vol.VII,No-2(A), March  2009, Physics)

Substrate Temperature Dependence of Film Thickness for Zm1-xCoxO (x=0.03 mol) Film by Rapid Oxalate Decomposition Technique

Author: Myint Myint Win1, Ohnmar Than2, Myint Kalayar3, Than Than Win4,Yin Maung Maung1 and Ko Ko Kyaw Soe1

Abstract:

       Co(0.3 mol) –doped Zinc oxide precursor was obtained by precipitation of the mixture of zinc-acetate, Co-acetate and oxalic acid. The Zn1-x CoxO gel  was poured with constant  rate (0.75 rpm) on the dependence of film thickness was systematically observed.

Key Words: zinc-acetate, Zm1-xCoxO gel, film thickness

Published:  Published:  Myanmar Academy of Arts and Science Research Journal (Vol.VII,No-2(A), March  2009, Physics)

Deposition Time Dependence of Film Thickness for Pb1-x(Ca)x TiO3 (x=0.48 mol) Electrophoretic Film

Author: Khin Moe Thant1, Than Than Win2, Moe Moe Aye1, Yin Mg Mg1 and Ko Ko Kyaw Soe3

Abstract:

       Ca-modified (0.48 mol) PbTiO3 film was firstly prepared on highly polished steel substrate by electrophoretic method. Film coating was performed at different deposition time (30min, 45min, 60min, 75min) function of deposition time was studied.

Keywords: electrophoretic, highly-polished steel, film thickness

Published:  Published:  Myanmar Academy of Arts and Science Research Journal (Vol.VII,No-2(A), March  2009, Physics)

Capacitance Measurement of PVA/Zinc Acetate Fibre

Author: Nyo Nyo1, Moh Moh Lwin2, Than Than Win3,Yin Maung Maung1 and Ko Ko Kyaw Soe4

Abstract:

         The viscous gel of PVA/Zinc acetate acetate composite is a focus of this investigation. The used gel has chemical pure hydrated hydrated zinc Zn (CH3CO2).2H2O and 20% by weight of PVA (Polyvinyl alcohol). The change in dielectric properties as a function of sample thickness is measured with both Ag-electrode and Cu-electroe.

Key Words: hydrated zinc acetate, Ag. electrode, dielectric properties

Published:  Published:  Myanmar Academy of Arts and Science Research Journal (Vol.VII,No-2(A), March  2009, Physics)

Synthesis and Characterization of TiO2 Dependent Lead Titantae Ceramics by Hydrothermal Method

Author: Myint Kalyar, 1Than Than Win2 Cho Cho Myat Aung3, Kyaw Win4, Chaw Lunn Thu3, Than Htoon5, Yin Mg Mg3 and Ko Ko Kyaw Soe6

Abstract:

       Growth of lead titanate ceramics is prepared by hydrothermal synthesis at (110-200˚C) using KOH base in Teflon-lined stainless steel bomb. Memory behaviours of all PbTiO3 ceramics are measured at different applied voltage.

Keywords: hydrothermal synthesis, KOG base, Teflon-lined stainless steel bomb, memory behaviours.

Published:  Published:  Myanmar Academy of Arts and Science Research Journal (Vol.VII,No-2(A), March  2009, Physics)

Study on Spinning Time Dependence of Film Thickness and Dielectric Properties for PBTiO3 (Pb/Ti=65/35)Cell

Author: Moh Moh Lsin', Than Than Win2, Zin Win Mar3, Kyaw Win4 Hla Hla Aye3, Yin Mg   Mg3, Than Htoon5& Ko Ko Kyaw Soe6'

Abstract:

        The starting regents used in this work were lead acetate trihydrate (4.93g) and titanium isopropoxide (0.007g)of AnalaR-grate. Triethanolarmine (TEA)was used as chelating agent. Lead titanate film was formed on Cucoated p-Si (100) substrate by spin coationg at spin time variations from 30s to 60s. The best film thickness was found at60s spin time. Dielectric properties of this film were observed by means of C- F, εr-f and tan δ-f variations.

Key words: lead titanate, spin time, film thickness, dielectric properties

Published:  Published:  Myanmar Academy of Arts and Science Research Journal (Vol.VII,No-2(A), March  2009, Physics)

Growth and Characterization of Ferroelectric Field Effect Transistor with PLT Gated

Author: Htay Htay Win1, Myint Myint Win2, Thandar Tin2, Than Than Win3, Moh Moh Lwin2,  Yin Maung Maung2 and Ko Ko Kyaw Soe4

Abstract:

         The epitaxial growth technique developed in this work was based on the use of PbO, TiO2 and La2O3, powder of regent- grade in the preparation of precursor sol in the processing of La2 O3, powder of regent-grade in the preparation of precursor sol in the processing of La modified lead titanate thin film at different process temperature. As the experimental results, the output characteristic curve and product parameters were examined to be within the range of accepted values for 1T of FRAM (Single Transistor of Ferroelectric Random Acess Memory)

Key words : eptitaxial, PbO, TiO2, FRAM

Published:  Published:  Myanmar Academy of Arts and Science Research Journal (Vol.VI,No-2(B), March  2008, Physics)

Growth and Drain Characteristics of Thin Film Transistor with Barium Titanate Gate Materials

Author: Myint Thein1, Moh Moh Lwin2,  Than Than Win1, Yin Maung Maung2, and Ko Ko Kyaw Soe3

Abstract:

     The purpose of this paper was involved with the understanding of mechanism that revealed to the improvement of output characteristics of barium titanate film with SiO2 insulated layer (Oxide Layer) in order to allow their application in 1T of FeRAM.

 Key words : thin film transistor, drain characteristics, FeRAM

Published:  Published:  Myanmar Academy of Arts and Science Research Journal (Vol.VI,No-2(B), March  2008, Physics)

Structural and Micro Structural Properties of ZnO Film

Author: Kyaw Zaw1, Myint Myint Win2 , Cho Cho Myat Aung2, Myint Kalyar2, Moh Moh Lwin2,  

Yin Maung Maung2, Than Than Win3 & Ko Ko Kyaw Soe4

Abstract:

       The first of this cell was concerned with the growth of ZnO film on the naked p-Si(100)- substrate. XRD analysis was carried out to identify film structure, phase assignment and crystallographic properties while the micro-structural properties of ZnO film were obtained by SEM.

Key words : ZnO film, XRD, SEM

Published:  Published:  Myanmar Academy of Arts and Science Research Journal (Vol.VI,No-2(B), March  2008, Physics)

Pyroelectric Properties of Bismuth Titanate Thin Film

Author: Khin Myint Htoon1, Myint Kalyar2, Moh Moh Lwin2,  Myint Myint Win2 ,Yin Maung Maung2, Than Than Win3 & Ko Ko Kyaw Soe4

Abstract:

       The bismuth titanate thin film was prepared by chemical solution deposition technique. The substrates used in this work were highly-polished p-Si and oxide layer buffered Si-substrate. Annealing temperature dependence of pyroelectric current was observed. Dispersion of pyroelectric coefficient as a function of annealing temperature was also studied.

Key words : bismuth titanate, pyroelectric current, pyroelectric coefficient

Published:  Published:  Myanmar Academy of Arts and Science Research Journal (Vol.VI,No-2(B), March  2008, Physics)

Capacitance-Voltage Characteristics of PST Thin Film Capacitor

Author: Nilar Win1, Aye Su Mon Win1, Than Than Win2,  Than Htoon3 ,Yin Maung Maung4 and Ko Ko Kyaw Soe5

Abstract:

       Fabrication of Sn-doped lead titanate film was presented by spin-coating technique. The substrate temperatures treated in this work were 500C700C maintained 1hr for more film quality. For the charge storage capacity of fabricated cell, C-V characteristics were studied by simple R-C circuit in which Cu/PST/p-Si (100) cell was served as a circuit element. From C-V curve, counter-clockwise hysteresis loop was formed for all fabricated cell. Threshold voltage (VTH), flat-band voltage (VFB), the width of the memory (MW), maximum accumulation capacitance (Caccu) and the density of interfacial surface state (Nss) were systematically measured from C-V loop.

Key words : C-V characteristics, VTH, VFB, Caccu Nss

Published:  Published:  Myanmar Academy of Arts and Science Research Journal (Vol.VI,No-2(B), March  2008, Physics)

Fabrication and Characterization of PST Gated Thin Film Transistor

Author: Aye Su Mon Win1, Nilar Win1, Than Than Win2,  Than Htoon3 ,Yin Maung Maung4 and Ko Ko Kyaw Soe5

Abstract:

     Fabrication of PST gated TFT was performed on P2O5 substituted SiO2/p-Si substrate structure. Drain characteristics of these TFT's were observed. According to the experimental results, the fabricated TFT was applied for 1T of FRAM.

Key words : thin film transistor, drain characteristics

Published:  Published:  Myanmar Academy of Arts and Science Research Journal (Vol.VI,No-2(B), March  2008, Physics)

Study on Dielectric Properties of TiO2 Thin Film

Author: May Yee Thein1, Yin Yin Thein2, Than Than Win3, Ko Ko Kyaw Soe4

Abstract:

      Dispersion of capacitances as a function of different applied frequencies was performed. From  C-f spectra, two distinct states were formed in which the capacitance value was slightly decreased at low frequency region and reached its constant value at high frequency region. r – f and tan -f variations were also investigated.

Key words : C-f spectra, dielectric constant, dielectric loss

Published:  Published:  Myanmar Academy of Arts and Science Research Journal (Vol.VI,No-2(B), March  2008, Physics)

Powder Structure and Phase Analysis of HgSe and ZnTe Solid Phase

Author: Nyo Nyo1, Moe Moe Aye1, Cho Cho Myat Aung1, Than Than Win2,Yin Maung Maung1 and Ko Ko kyaw Soe3

Abstract:

The great deal of information about the powder structure, phase assignment and crystallographic characterizations of fabricated powders (HgSe & ZnTe) was obtained by XRD measurement. The calculated lattice strings were found to be slightly changed as compared to reported value.

Key words: crystallographic characterization lattice strain. powder structure.

Published:  Published:  Myanmar Academy of Arts and Science Research Journal (Vol.VI,No-2(B), March  2008, Physics)

Pyroelectric and 1 – V Variation of Gel Route Sol Derived C2 From La and Mn Modified PbTiO3 Thin Film

Author: Moh Moh Lwin1, Myint Kalyar1, Yin Maung Maung1, Than Than Win2, Than Htoon3 & Ko Ko Kyaw Soe4

Abstract:

      La and Mn doped PbTiO3 films are prepared by gel route sol method and heat treated at 700c for 1 hr. Pyrocurrent of films are studied by using ho me made temperature controller and nanoammeter. Pyroelectric coefficients of the sample are also examined. For charge storage mechanism, C-2 – V characteristic were also studied.

Key words: Pyroelectric current, pyroelectric coefficient and 1 –V characteristics c2

Published:  Published:  Myanmar Academy of Arts and Science Research Journal (Vol.VI,No-2(B), March  2008, Physics)

Charge Conduction Mechanism and Pyroelectric Properties of Bi4-x Lax Ti3 O12 (x=0, 0.10, 0.12, 0.14 mol %) Film

Author: Myint Kalya1, Moh Moh Lwin1, Yin Maung Maung1, Than Than Win2, Than Htoon3 and Ko Ko Kyaw Soe4

Abstract:

      The first part of this paper was involved with the fabrication of bismuth titanate and     La-modified (x = 0, 0.10, 0.12 and 0.14 mol %) bismuth titanate film by chemical sol deposition technique. For the cell quality, C-2 – V variation was systematically observed. For the pyroelectric properties, temperature dependence of pyro-current and pyro-coefficient were studied.

Key words: La-modified bismuth titanate film, c-2 – V variation,

Published:  Published:  Myanmar Academy of Arts and Science Research Journal (Vol.VI,No-2(B), March  2008, Physics)

Structural Characterization and Photovoltaic Behaviors of ZnMnO3 Film

Author: Moe Moe Aye1 , Than Than Win2, Than Htoon3, Yin Maung Maung 1 and Ko Ko Kyaw Soe4

Abstract:

      ZnMnO3, film was grown on p-Si (100) substrate at different process temperatures. Structural properties of these films were checked by XRD technique. As the photovoltaic application, Voc-Isc variation curve was studied and some important parameters were observed.

Published:  Published:  Myanmar Academy of Arts and Science Research Journal (Vol.VI,No-2(B), March  2008, Physics)

C-V and Pyroelectric Properties of Pb1-x Lax TiO3 Film for IR Sensor Application

Author: Nwe Nwe Oo1 , Myint Myint Win2, Than Than Win3, Yin Maung Maung4 

and Ko Ko Kyaw Soe5

Abstract:

       This paper gives a growth of Pb1-x Lax TiO3 (x = 1 mol%) film on naked Si and SiO2/Si substrate structures. After electroding the PLT/Si and PLT/SiO2/Si, the focus is put on the description of C-V characteristics measurement system. From C-V counter-clockwise loop, threshold voltage VTH (U & D), flat-band voltage VFB (U, D), maximum accumulation capacitance (Caccu), memory window (MW) and density of interfacial surface state (Nss) were observed. This paper closes with the pyroelectric properties (pyrocurrent and pyroelectric coefficient) measurement systems. 

Key words: pyroelectric properties, C-V characteristics, threshold voltage

Published:  Published:  Myanmar Academy of Arts and Science Research Journal (Vol.VI,No-2(B), March  2008, Physics)