Author: Khin Myint Htoon1, Myint Kalyar2, Moh Moh Lwin2, Myint Myint Win2 ,Yin Maung Maung2, Than Than Win3 & Ko Ko Kyaw Soe4
Abstract:
The bismuth titanate thin film was prepared by chemical solution deposition technique. The substrates used in this work were highly-polished p-Si and oxide layer buffered Si-substrate. Annealing temperature dependence of pyroelectric current was observed. Dispersion of pyroelectric coefficient as a function of annealing temperature was also studied.
Key words : bismuth titanate, pyroelectric current, pyroelectric coefficient
Published: Published: Myanmar Academy of Arts and Science Research Journal (Vol.VI,No-2(B), March 2008, Physics)
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