Author: Myint Thein1, Moh Moh Lwin2, Than Than Win1, Yin Maung Maung2, and Ko Ko Kyaw Soe3
Abstract:
The purpose of this paper was involved with the understanding of mechanism that revealed to the improvement of output characteristics of barium titanate film with SiO2 insulated layer (Oxide Layer) in order to allow their application in 1T of FeRAM.
Key words : thin film transistor, drain characteristics, FeRAM
Published: Published: Myanmar Academy of Arts and Science Research Journal (Vol.VI,No-2(B), March 2008, Physics)
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