Fabrication and Characterization of PST Gated Thin Film Transistor

Author: Aye Su Mon Win1, Nilar Win1, Than Than Win2,  Than Htoon3 ,Yin Maung Maung4 and Ko Ko Kyaw Soe5

Abstract:

     Fabrication of PST gated TFT was performed on P2O5 substituted SiO2/p-Si substrate structure. Drain characteristics of these TFT's were observed. According to the experimental results, the fabricated TFT was applied for 1T of FRAM.

Key words : thin film transistor, drain characteristics

Published:  Published:  Myanmar Academy of Arts and Science Research Journal (Vol.VI,No-2(B), March  2008, Physics)