Abstract:
Fine ZnO powder was formed using ball mill at 30 h. ZnO thin film was deposited onto naked p-Si (100) substrate by spin coating technique. It was treated in Oxygen and atmospheric annealing was followed to change the ZnO solution coating into oxide film. Photo voltage (Vph) and Photocurrent (Iph) of ZnO/Si cell were measured before and after packaging. Photo I-V characteristics (illuminated I-V) were investigated by monochromatic Na lamp. From the current and voltage characteristics under illumination condition, conversion efficiency (ηcon), fill factor (Ff), quantum yield (Y) and series resistance (Rs) were observed for the cell without plastic package.
Key words: Fine ZnO powder, ZnO thin film, spin coating, ZnO/Si packaging
Published: Myingyan Degree College Research Journal (Vol-7)
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